Measurement of the Static Characteristics of Three-Terminal Semiconducter Devices (Transistors, FETs, etc.)

Measurement of the Static Characteristics of Three-Terminal Semiconductor Devices (Transistors, FETs, etc.)

The GS820 can measure drain current ID by applying gate-source voltage VGS from channel 1 and drain-source voltage VDS from channel 2.Tm Gs820 17

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GS820 Multi Channel Source Measure Unit

  • Yokogawa source measure unit GS820
  • Precision SMU quick response for automated testing
  • High-speed communication improves productivity
  • Customizable to enable any test

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