Measurement of the Static Characteristics of Three-Terminal Semiconducter Devices (Transistors, FETs, etc.)
Measurement of the Static Characteristics of Three-Terminal Semiconductor Devices (Transistors, FETs, etc.)
The GS820 can measure drain current ID by applying gate-source voltage
VGS from channel 1 and drain-source voltage VDS from channel 2.
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GS820 Multi Channel Source Measure Unit
- Yokogawa source measure unit GS820
- Precision SMU quick response for automated testing
- High-speed communication improves productivity
- Customizable to enable any test
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