Measurement of the Static Characteristics of Three-Terminal Semiconducter Devices (Transistors, FETs, etc.)
Measurement of the Static Characteristics of Three-Terminal Semiconductor Devices (Transistors, FETs, etc.)
The GS820 can measure drain current ID by applying gate-source voltage VGS from channel 1 and drain-source voltage VDS from channel 2.
Related Industries
Related Products & Solutions
GS820 Source Measure Unit
- 2-Channel
- ±50 V / ±1.2 A or ±18V / ± 3.2 A
- Resolution: 1 µV / 1 pA
- Sweep: Linear, Log, Custom
- Output: DC, Pulse (50 µs to 3600 s)
Top